Method for measuring the drift mobility in doped semiconductors
Patent
·
OSTI ID:7012006
A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.
- Research Organization:
- RCA Corp
- DOE Contract Number:
- AC03-78ET21074
- Assignee:
- RCA Corp., New York, NY (United States)
- Patent Number(s):
- US 4319187; A
- Application Number:
- PPN: US 6-133253
- OSTI ID:
- 7012006
- Resource Relation:
- Patent File Date: 24 Mar 1980
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON
CARRIER MOBILITY
SOLAR CELLS
CHARGE CARRIERS
DOPED MATERIALS
HYDROGENATION
MEASURING METHODS
SEMICONDUCTOR MATERIALS
CHEMICAL REACTIONS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
MATERIALS
MOBILITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
360606 - Other Materials- Physical Properties- (1992-)
36 MATERIALS SCIENCE
SILICON
CARRIER MOBILITY
SOLAR CELLS
CHARGE CARRIERS
DOPED MATERIALS
HYDROGENATION
MEASURING METHODS
SEMICONDUCTOR MATERIALS
CHEMICAL REACTIONS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
MATERIALS
MOBILITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
360606 - Other Materials- Physical Properties- (1992-)