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Title: Method for measuring the drift mobility in doped semiconductors

A method for measuring the drift mobility of majority carriers in semiconductors consists of measuring the current transient in a Schottky-barrier device following the termination of a forward bias pulse. An example is given using an amorphous silicon hydrogenated material doped with 0.2% phosphorus. The method is particularly useful with material in which the dielectric relaxation time is shorter than the carrier transit time. It is particularly useful in material useful in solar cells. 10 figs.
Authors:
Publication Date:
OSTI Identifier:
7012006
Report Number(s):
US 4319187; A
PPN: US 6-133253
DOE Contract Number:
AC03-78ET21074
Resource Type:
Patent
Resource Relation:
Patent File Date: 24 Mar 1980
Research Org:
RCA Corp
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; CARRIER MOBILITY; SOLAR CELLS; CHARGE CARRIERS; DOPED MATERIALS; HYDROGENATION; MEASURING METHODS; SEMICONDUCTOR MATERIALS; CHEMICAL REACTIONS; DIRECT ENERGY CONVERTERS; ELEMENTS; EQUIPMENT; MATERIALS; MOBILITY; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR EQUIPMENT 140501* -- Solar Energy Conversion-- Photovoltaic Conversion; 360606 -- Other Materials-- Physical Properties-- (1992-)