Pulse response characteristics of ZnO varistors

Modine, F A; Wheeler, R B

doi:10.1063/1.345135

Title: Pulse response characteristics of ZnO varistors

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Abstract

A study is reported of the influences of temperature, circuit resistance, and pulse repetition rate on the ZnO varistor inductive pulse response that is disclosed by voltage overshoot and current undershoot. Exponential time constants are fitted to the voltage overshoot and the current undershoot obtained by using high- and low-impedance pulse supplies, respectively. Nearly identical time constants of a few microseconds are found at room temperature, but the voltage overshoot exhibits a temperature-independent time constant whereas the current undershoot exhibits a shorter time constant at low temperature. However, it is also demonstrated that small increases in circuit resistance can change the shape of the current undershoot and cause a decrease in the calculated time constant. It is concluded that the temperature dependence of the current undershoot is a direct consequence of the temperature dependence of the grain resistivity and that it does not result from a temperature-dependent barrier response. The response to repeated pulses reveals a significant polarization current even when a varistor is in the highly conducting breakdown state. A long-term memory of preceding pulses is associated with this polarization current. The inductive response of a varistor is complicated by the influence of this memory, and a shorter-term memorymore »« less

Authors:

Modine, F A; Wheeler, R B ^[1]

Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6030 (USA)

Publication Date:: Tue May 15 00:00:00 EDT 1990

OSTI Identifier:: 6974480

DOE Contract Number:: AC05-84OR21400

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics; (USA)

Additional Journal Information:: Journal Volume: 67:10; Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; SEMICONDUCTOR RESISTORS; TEMPERATURE DEPENDENCE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; HOLES; LIFETIME; POLARIZATION; PULSE TECHNIQUES; RESPONSE FUNCTIONS; ZINC OXIDES; CHALCOGENIDES; CURRENTS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; FUNCTIONS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RESISTORS; SEMICONDUCTOR DEVICES; ZINC COMPOUNDS; 360204* - Ceramics, Cermets, & Refractories- Physical Properties

Citation Formats


                    Modine, F A, and Wheeler, R B. Pulse response characteristics of ZnO varistors.  United States: N. p., 1990. 
        Web.  doi:10.1063/1.345135.

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                    Modine, F A, & Wheeler, R B. Pulse response characteristics of ZnO varistors.  United States.  https://doi.org/10.1063/1.345135

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                    Modine, F A, and Wheeler, R B. 1990.  
        "Pulse response characteristics of ZnO varistors".  United States.  https://doi.org/10.1063/1.345135.

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@article{osti_6974480,

  title        = {Pulse response characteristics of ZnO varistors},

  author       = {Modine, F A and Wheeler, R B},

  abstractNote = {A study is reported of the influences of temperature, circuit resistance, and pulse repetition rate on the ZnO varistor inductive pulse response that is disclosed by voltage overshoot and current undershoot. Exponential time constants are fitted to the voltage overshoot and the current undershoot obtained by using high- and low-impedance pulse supplies, respectively. Nearly identical time constants of a few microseconds are found at room temperature, but the voltage overshoot exhibits a temperature-independent time constant whereas the current undershoot exhibits a shorter time constant at low temperature. However, it is also demonstrated that small increases in circuit resistance can change the shape of the current undershoot and cause a decrease in the calculated time constant. It is concluded that the temperature dependence of the current undershoot is a direct consequence of the temperature dependence of the grain resistivity and that it does not result from a temperature-dependent barrier response. The response to repeated pulses reveals a significant polarization current even when a varistor is in the highly conducting breakdown state. A long-term memory of preceding pulses is associated with this polarization current. The inductive response of a varistor is complicated by the influence of this memory, and a shorter-term memory attributed to the lifetime of electron holes.},

  doi          = {10.1063/1.345135},

  url          = {https://www.osti.gov/biblio/6974480},
  journal      = {Journal of Applied Physics; (USA)},

  issn         = {0021-8979},

  number       = ,

  volume       = 67:10,

  place        = {United States},

  year         = {Tue May 15 00:00:00 EDT 1990},

  month        = {Tue May 15 00:00:00 EDT 1990}

}

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