Valence photoelectron spectroscopy of Gd silicides

Journal Article · Thu Feb 15 00:00:00 EST 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.41.3123· OSTI ID:6910190

Braicovich, L ^[1]; Puppin, E; Lindau, I ^[2]; Iandelli, A; Olcese, G L; Palenzona, A ^[3]

---

1. Istituto di Fisica, Politecnico di Milano, P.za Leonardo da Vinci 32, 20133 Milano, Italy (IT)
2. Stanford Electronics Laboratories, Stanford University, Stanford, California 94305 (USA)
3. Istituto di Chimica Fisica, Universita di Genova, Corso Europa, Palazzo delle Scienze, 16132 Genova, (Italy)

Gd{sub 3}Si{sub 5}, GdSi, and Gd{sub 5}Si{sub 3} were investigated with photoemission spectroscopy in the photon-energy range 40.8--149 eV by exploiting the energy dependence of the photoemission cross sections and the valence resonance at the crossing of the Gd 4{ital d}-4{ital f} threshold. The modification of the spectra versus photon energy, along with their stoichiometry dependence, show the relevance of covalent mixed Gd 5{ital d}--Si 3{ital sp} states in the formation of the chemical bond. In the region close to the Fermi level an increase of the {ital d} contribution is observed. These points are discussed in connection with the existing models of the silicide bond.

• OSTI ID: 6910190
• Journal Information: Physical Review, B: Condensed Matter; (USA), Vol. 41:5; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GADOLINIUM SILICIDES
PHOTOELECTRON SPECTROSCOPY
CHEMICAL BONDS
CROSS SECTIONS
FERMI LEVEL
VALENCE
ELECTRON SPECTROSCOPY
ENERGY LEVELS
GADOLINIUM COMPOUNDS
RARE EARTH COMPOUNDS
SILICIDES
SILICON COMPOUNDS
SPECTROSCOPY
360602* - Other Materials- Structure & Phase Studies