Burnout thresholds and cross section of power MOS transistors with heavy ions. Technical report, 1 May 1986-30 April 1988

Technical Report · Thu Feb 01 00:00:00 EST 1990

OSTI ID:6899568

Waskiewicz, A E; Groninger, J W

Power MOSFET heavy ion-induced Single Event Burnout tests were performed jointly by representatives of the Aerospace Corporation, NASA Goddard, NWSC Crane and Rockwell International. For the most part, presented are the results of the burnout threshold and cross section characterizations performed on n-channel power MOSFETs, however a small amount of p-channel data is also included. In addition, data on the effect of temperature, gate bias, total dose and inductive loading on MOSFET Single Event Burnout sensitivity is preferred. At the time of the test effort, radiation hardened devices were being developed by International Rectifier and RCA/GE. The heavy-ion-induced burnout test results on available samples of these devices are also incorporated for comparison to the commercial and JEDEC versions tested.

• Research Organization: Rockwell International Corp., Anaheim, CA (USA)
• OSTI ID: 6899568
• Report Number(s): AD-A-218998/3/XAB
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
MOSFET
PERFORMANCE TESTING
RADIATION HARDENING
CROSS SECTIONS
EVALUATION
FIELD EFFECT TRANSISTORS
GATING CIRCUITS
HEAVY IONS
JUNCTION TRANSISTORS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
POWER
PROGRESS REPORT
RECTIFIERS
SENSITIVITY
CHARGED PARTICLES
DOCUMENT TYPES
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
EQUIPMENT
HARDENING
IONS
MATERIALS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
TESTING
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)