Surface morphology during multilayer epitaxial growth of Ge(001)

Journal Article · Mon Feb 13 00:00:00 EST 1995 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.74.1127· OSTI ID:6767538

Van Nostrand, J E; Chey, S J; Hasan, M; Cahill, D G; Greene, J E ^[1]

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1. Department of Materials Science, The Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

The surface morphology of Ge(001) films grown by molecular beam epitaxy on a Ge(001) substrate is measured using scanning tunneling microscopy. Growth mounds are observed for single crystal films deposited at temperatures of 60--230 [degree]C and film thicknesses of 5 nm to 1 [mu]m. With increasing growth temperature, the average separation between mounds becomes increasingly well defined, increasing from less than 10 nm at 60 [degree]C to nearly 200 nm at 230 [degree]C. This regular arrangement of growth mounds is inconsistent with the self-affine growth morphology predicted by most kinetic roughening models.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 6767538
• Journal Information: Physical Review Letters; (United States), Vol. 74:7; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
MOLECULAR BEAM EPITAXY
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
MICROSTRUCTURE
MORPHOLOGY
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
ELEMENTS
EPITAXY
METALS
MICROSCOPY
360602* - Other Materials- Structure & Phase Studies
360601 - Other Materials- Preparation & Manufacture