Infrared reflectance measurement of ion implanted silica
Infrared reflectance spectra of silica glass implanted with Ti, Cr, Mn, Fe, and Bi to doses between 0.5 - 6 /times/10/sup 16/ cm/sup /minus/2/ have been measured from 5000 cm/sup /minus/1/ to 400 cm/sup /minus/1/ at room temperature. The ion energy of the implantation was 160 keV and the current was 10..mu..A. Alterations in reflectance of bands at 1125 and 481 cm/sup /minus/1/ in the spectrum of an unimplanted sample of the order of 20% are observed. A band attributed to non-bridging oxygen ions at /approximately/1015 cm/sup /minus/1/ is observed to increase in intensity with increasing dose for all species. The band at 1125 cm/sup /minus/1/ is observed to shift to lower wavenumber with implantation. Bands due to implanted ion-oxygen vibrations were not detected. The magnitudes of the effects on the existing bands were ion specific. This ion specificity is attributed to the differing chemical states of the implanted ions after implantation. 15 refs., 8 figs.
- Research Organization:
- Belmont Coll., Nashville, TN (USA). Dept. of Physics; Fisk Univ., Nashville, TN (USA). Dept. of Physics; Vanderbilt Univ., Nashville, TN (USA). Dept. of Materials Science; Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6743494
- Report Number(s):
- CONF-8808133-2; ON: DE89001702
- Resource Relation:
- Conference: SPIE conference on underwater imaging, San Diego, CA, USA, 15 Aug 1988; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICA
ION IMPLANTATION
BISMUTH IONS
CHROMIUM IONS
INFRARED SPECTRA
IRON IONS
TITANIUM IONS
CHALCOGENIDES
CHARGED PARTICLES
IONS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA
360605* - Materials- Radiation Effects
360603 - Materials- Properties