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Title: Infrared reflectance measurement of ion implanted silica

Conference ·
OSTI ID:6743494

Infrared reflectance spectra of silica glass implanted with Ti, Cr, Mn, Fe, and Bi to doses between 0.5 - 6 /times/10/sup 16/ cm/sup /minus/2/ have been measured from 5000 cm/sup /minus/1/ to 400 cm/sup /minus/1/ at room temperature. The ion energy of the implantation was 160 keV and the current was 10..mu..A. Alterations in reflectance of bands at 1125 and 481 cm/sup /minus/1/ in the spectrum of an unimplanted sample of the order of 20% are observed. A band attributed to non-bridging oxygen ions at /approximately/1015 cm/sup /minus/1/ is observed to increase in intensity with increasing dose for all species. The band at 1125 cm/sup /minus/1/ is observed to shift to lower wavenumber with implantation. Bands due to implanted ion-oxygen vibrations were not detected. The magnitudes of the effects on the existing bands were ion specific. This ion specificity is attributed to the differing chemical states of the implanted ions after implantation. 15 refs., 8 figs.

Research Organization:
Belmont Coll., Nashville, TN (USA). Dept. of Physics; Fisk Univ., Nashville, TN (USA). Dept. of Physics; Vanderbilt Univ., Nashville, TN (USA). Dept. of Materials Science; Oak Ridge National Lab., TN (USA)
DOE Contract Number:
AC05-84OR21400
OSTI ID:
6743494
Report Number(s):
CONF-8808133-2; ON: DE89001702
Resource Relation:
Conference: SPIE conference on underwater imaging, San Diego, CA, USA, 15 Aug 1988; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English