Transient charge technique investigation of HgI/sub 2/ and CdSe nuclear detectors
Abstract
The use of the Transient Charge Technique (TCT) for the evaluation of high resistivity Mercuric Iodide and Cadmium Selenide nuclear radiation detectors is suggested. It has been shown that the real values of mobilities and trapping times of electrons and holes in HgI/sub 2/ can be easily obtained from the analysis of the voltage transient response to drift of charge carriers created by alpha particles. This allows one to evaluate the bulk transport properties of the material and, additionally, to estimate accurately the surface recombination velocity of the carriers. Preliminary results on the shape of voltage transients in CdSe are also reported, and the limitations of the use of the TCT for characterization of both materials are discussed.
- Authors:
- Publication Date:
- Research Org.:
- School of Applied Science and Technology, The Hebrew Univ. of Jerusalem, Jerusalem 91904
- OSTI Identifier:
- 6726229
- Report Number(s):
- CONF-861007-
Journal ID: CODEN: IETNA
- Resource Type:
- Conference
- Journal Name:
- IEEE Trans. Nucl. Sci.; (United States)
- Additional Journal Information:
- Journal Volume: NS-34:1; Conference: Nuclear science and nuclear power systems symposium, Washington, DC, USA, 29 Oct 1986
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; HGI2 SEMICONDUCTOR DETECTORS; CHARGE CARRIERS; TRANSIENTS; ALPHA PARTICLES; CADMIUM SELENIDES; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRONS; HOLES; RECOMBINATION; TIME DEPENDENCE; TRAPPING; CADMIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; LEPTONS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR DETECTORS; 440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments
Citation Formats
Roth, M, Burger, A, Nissenbaum, J, and Schieber, M. Transient charge technique investigation of HgI/sub 2/ and CdSe nuclear detectors. United States: N. p., 1987.
Web.
Roth, M, Burger, A, Nissenbaum, J, & Schieber, M. Transient charge technique investigation of HgI/sub 2/ and CdSe nuclear detectors. United States.
Roth, M, Burger, A, Nissenbaum, J, and Schieber, M. 1987.
"Transient charge technique investigation of HgI/sub 2/ and CdSe nuclear detectors". United States.
@article{osti_6726229,
title = {Transient charge technique investigation of HgI/sub 2/ and CdSe nuclear detectors},
author = {Roth, M and Burger, A and Nissenbaum, J and Schieber, M},
abstractNote = {The use of the Transient Charge Technique (TCT) for the evaluation of high resistivity Mercuric Iodide and Cadmium Selenide nuclear radiation detectors is suggested. It has been shown that the real values of mobilities and trapping times of electrons and holes in HgI/sub 2/ can be easily obtained from the analysis of the voltage transient response to drift of charge carriers created by alpha particles. This allows one to evaluate the bulk transport properties of the material and, additionally, to estimate accurately the surface recombination velocity of the carriers. Preliminary results on the shape of voltage transients in CdSe are also reported, and the limitations of the use of the TCT for characterization of both materials are discussed.},
doi = {},
url = {https://www.osti.gov/biblio/6726229},
journal = {IEEE Trans. Nucl. Sci.; (United States)},
number = ,
volume = NS-34:1,
place = {United States},
year = {Sun Feb 01 00:00:00 EST 1987},
month = {Sun Feb 01 00:00:00 EST 1987}
}