Polarization control in ridge-waveguide-laser diodes
Journal Article
·
· Appl. Phys. Lett.; (United States)
The polarization dependence of the gain/current relation and threshold current of quasi-index-guided laser diodes is analyzed for the case of lambda = 1.3 ..mu..m InGaAsP-InP ridge-waveguide lasers. Thereby it is shown that three different regimes for the stripe width and the lateral effective index discontinuity can be distinguished where one modal polarization (TE or TM) predominates. The significance of this finding on laser design and polarization control is discussed, and a comparison is performed on experimental results.
- Research Organization:
- Siemens AG, Research Laboratories, Otto-Hahn-Ring 6, D-8000 Muenchen 83, Federal Republic of Germany
- OSTI ID:
- 6664035
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 50:16
- Country of Publication:
- United States
- Language:
- English
Similar Records
Polarization competition in quasi-index-guided laser diodes
Optimum design of 1. 55-. mu. m double heterostructures and ridge-waveguide lasers
Phase-locking characteristics of coupled ridge-waveguide InP/InGaAsP diode lasers
Journal Article
·
Tue Mar 15 00:00:00 EST 1988
· J. Appl. Phys.; (United States)
·
OSTI ID:6664035
Optimum design of 1. 55-. mu. m double heterostructures and ridge-waveguide lasers
Journal Article
·
Wed Aug 01 00:00:00 EDT 1984
· Opt. Lett.; (United States)
·
OSTI ID:6664035
Phase-locking characteristics of coupled ridge-waveguide InP/InGaAsP diode lasers
Journal Article
·
Sat Dec 01 00:00:00 EST 1984
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6664035
+3 more
Related Subjects
42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
PERFORMANCE
POLARIZATION
GAIN
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INFRARED RADIATION
THRESHOLD CURRENT
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)
SEMICONDUCTOR LASERS
DESIGN
PERFORMANCE
POLARIZATION
GAIN
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INFRARED RADIATION
THRESHOLD CURRENT
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)