Selection of substrate orientation and phosphorus flux to achieve p-type carbon doping of Ga{sub 0.5}In{sub 0.5}P by molecular beam epitaxy

Journal Article · Fri Aug 01 00:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119737· OSTI ID:664442

Friedman, D J; Kibbler, A E; Reedy, R ^[1]

---

1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

We show that the p-type doping of Ga{sub 0.5}In{sub 0.5}P grown by solid-source molecular beam epitaxy using CBr{sub 4} as a carbon source is very strongly dependent upon the phosphorus flux and upon the substrate misorientation from (100). High densities of A-type steps and low phosphorus flux favor the incorporated carbon acting as a p-type dopant. We demonstrate that with the substrate orientation and phosphorus flux chosen to satisfy these two criteria, doping of C:Ga{sub 0.5}In{sub 0.5}P into the mid-10{sup 18}holes/cm{sup 3} range can be achieved for the as-grown material. {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 664442
• Journal Information: Applied Physics Letters, Vol. 71, Issue 8; Other Information: PBD: Aug 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
GALLIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
INDIUM PHOSPHIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
CARBON
CRYSTAL DOPING
CARBON ADDITIONS
PHOSPHORUS ADDITIONS
SUBSTRATES