Surface diffusion of Sb on Si(111) measured by second harmonic microscopy
Journal Article
·
· Langmuir; (United States)
- Univ. of Illinois, Urbana, IL (United States)
Surface diffusion of Sb on Si(111) has been studied by second harmonic microscopy, which uses surface second harmonic generation to monitor surface concentration profiles with a 3 [mu]m spatial resolution. At temperatures near 55% of the bulk melting point and in the coverage range 0 < [theta] < 0.12, the activation energy, E[sub diff], and pre-exponential factor, D[sub 0], were found to be 60 [+-] 3 kcal/mol and 6 x 10[sup 3+0.7] cm[sup 2]/s, respectively. The high prefactor and activation energy indicate that the surface diffusion is governed by a recently developed adatom-vacancy mechanism. 38 refs., 4 figs., 1 tab.
- OSTI ID:
- 6628836
- Journal Information:
- Langmuir; (United States), Vol. 11:1; ISSN 0743-7463
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
ANTIMONY
DIFFUSION
SILICON
OPTICAL MICROSCOPY
SURFACE PROPERTIES
ABUNDANCE
ACTIVATION ENERGY
ELEMENTS
ENERGY
METALS
MICROSCOPY
SEMIMETALS
400201* - Chemical & Physicochemical Properties
360600 - Other Materials
360606 - Other Materials- Physical Properties- (1992-)
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
ANTIMONY
DIFFUSION
SILICON
OPTICAL MICROSCOPY
SURFACE PROPERTIES
ABUNDANCE
ACTIVATION ENERGY
ELEMENTS
ENERGY
METALS
MICROSCOPY
SEMIMETALS
400201* - Chemical & Physicochemical Properties
360600 - Other Materials
360606 - Other Materials- Physical Properties- (1992-)