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Title: Proton irradiation effects on advanced digital and microwave III-V components

A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10[sup 10] to 2 [times] 10[sup 14] protons/cm[sup 2]. Large soft-error rates were measured for digital GaAs MESFET (3 [times] 10[sup [minus]5] errors/bit-day) and heterojunction bipolar circuits (10[sup [minus]5] errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-[mu]m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10[sup 14] protons/cm[sup 2] [equivalent to total doses in excess of 10 Mrad (GaAs)].
Authors:
; ;  [1]
  1. (Sandia National Labs., Albuquerque, NM (United States)) (and others)
Publication Date:
OSTI Identifier:
6450210
Report Number(s):
CONF-940726--
Journal ID: ISSN 0018-9499; CODEN: IETNAE
Resource Type:
Conference
Resource Relation:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States); Journal Volume: 41:6Pt1; Conference: 31. annual international nuclear and space radiation effects conference, Tucson, AZ (United States), 18-22 Jul 1994
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; FIELD EFFECT TRANSISTORS; PHYSICAL RADIATION EFFECTS; INTEGRATED CIRCUITS; ATOMIC DISPLACEMENTS; EXPERIMENTAL DATA; GALLIUM ARSENIDES; MICROWAVE EQUIPMENT; SEMICONDUCTOR MATERIALS; SPACE FLIGHT; ARSENIC COMPOUNDS; ARSENIDES; DATA; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; INFORMATION; MATERIALS; MICROELECTRONIC CIRCUITS; NUMERICAL DATA; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS 440200* -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems