A floating gate MOSFET dosimeter requiring no external bias supply

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.685225· OSTI ID:644146

Tarr, N G ^[1]; Mackay, G F; Thomson, I ^[2]; Shortt, K ^[3]

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1. Carleton Univ., Ottawa, Ontario (Canada). Dept. of Electronics
2. Thomson and Nielsen Electronics, Nepean, Ontario (Canada)
3. National Research Council, Ottawa, Ontario (Canada). Div. of Physics

MOSFET dosimeters incorporating an electrically floating polysilicon gate have been fabricated in a commercial CMOS technology. Charge is placed on the floating gate by tunneling from a small overlapping injector gate. Subsequent irradiation partially discharges the floating gate, producing a change in threshold voltage which can be used to infer the absorbed dose. No external power source is required during this sensing period. Sensitivities up to 70 mVGy{sup {minus}1} (0.7 mV/rad) have been obtained for temperature-compensated matched-pair dosimeters under {sup 60}Co gamma irradiation.

• OSTI ID: 644146
• Report Number(s): CONF-970934-; ISSN 0018-9499; TRN: 98:008079
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 45, Issue 3Pt3; Conference: RADECS 97: radiations and their effects on devices and systems conference, Cannes (France), 15-19 Sep 1997; Other Information: PBD: Jun 1998
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DOSEMETERS
MOSFET
OPERATION
SENSITIVITY
DESIGN
FABRICATION
PERFORMANCE TESTING