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Title: (Magnetic properties of doped semiconductors)

Research continued on the transport behavior of doped semiconductors on both sides of the metal-insulator transition, and the approach to the transition from both the insulating and the metallic side. Work is described on magneto resistance of a series of metallic Si:B samples and CdSe. (CBS)
Publication Date:
OSTI Identifier:
6435513
Report Number(s):
DOE/ER/45153-T3
ON: DE91002395
DOE Contract Number:
FG02-84ER45153
Resource Type:
Technical Report
Research Org:
City Univ. of New York, NY (USA). Research Foundation
Sponsoring Org:
DOE/ER
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; MAGNETORESISTANCE; CADMIUM SELENIDES; SILICON; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; MAGNETIC FIELDS; MAGNETIC PROPERTIES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PROGRESS REPORT; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; CADMIUM COMPOUNDS; CHALCOGENIDES; DOCUMENT TYPES; ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMIMETALS 360603* -- Materials-- Properties