Anomalous tensoelectric effects in gallium arsenide tunnel diodes

Journal Article · Mon Feb 01 00:00:00 EST 1988 · Sov. Phys. J. (Engl. Transl.); (United States)

OSTI ID:6406326

Alekseeva, Z M; Vyatkin, A P; Krivorotov, N P; Shchegol', A A

Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

• Research Organization: Tomsk State Univ. (USSR)
• OSTI ID: 6406326
• Journal Information: Sov. Phys. J. (Engl. Transl.); (United States), Vol. 30:8; Other Information: Translated from Izvestiya Vysshikh Uchebynkh Zavedenij Fizika; 30: No. 8, 84-88(Aug 1987)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ELECTRIC CONDUCTIVITY
PIEZOELECTRICITY
PRESSURE EFFECTS
TUNNEL DIODES
COMPRESSION
CRYSTAL DEFECTS
DEFORMATION
ENERGY LEVELS
INCLUSIONS
P-N JUNCTIONS
STRAINS
STRESS ANALYSIS
STRESS INTENSITY FACTORS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTRICITY
GALLIUM COMPOUNDS
JUNCTIONS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies