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Title: Chemical state depth profiling by Auger signal decomposition: Silicon oxynitride

Conference ·
OSTI ID:6368348

Thin silicon nitride (Si/sub 3/N/sub 4/) films are widely used as a dielectric in metal-nitride-oxide-silicon (MNOS) structures for radiation hard non-volatile memories. The retention of charge in these devices depends, among other things, on the chemistry of the films. It has been reported that charge transport in MNOS structures can be reduced by replacing the Si/sub 3/N/sub 4/ film by a silicon oxynitride (SiO/sub x/N/sub y/) film. In order to understand the relationship between chemistry and retention of charge, it is necessary to have a technique that can determine the chemistry of the films as a function of depth. This can be accomplished with Auger electron spectroscopy by using fingerprint spectra for each of the elements and compounds present in the sample. By using classical least-squares techniques, a unique combination of the standard spectra can be found that best fits the unknown spectrum. When this method is repeated for each spectrum in a depth profile, a chemical state depth profile is obtained. The use of this technique to profile oxynitride films where the SiO/sub 2/ content varies between 0 and 12 atomic percent is presented. 6 refs., 7 figs.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6368348
Report Number(s):
SAND-89-0706C; CONF-890468-5; ON: DE89009830
Resource Relation:
Conference: 16. international conference on metallurgical coatings and equipment exhibit, San Diego, CA, USA, 17 Apr 1989; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English