Dielectrics for GaN based MIS-diodes
- Univ. of Florida, Gainesville, FL (United States); and others
GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States); Electric Power Research Inst., Palo Alto, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 634115
- Report Number(s):
- SAND-98-0524C; CONF-971201-; ON: DE98004137; BR: YN0100000; CNN: Grant ECS-9522887; TRN: AHC2DT01%%126
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: Feb 1998
- Country of Publication:
- United States
- Language:
- English
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