Low temperature formation of shallow p{sup +}n junctions by BF{sub 2}{sup +} implantation into thin Pd{sub 2}Si films on Si substrates
- National Chiao Tung Univ., Hsinchu (Taiwan, Province of China)
Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from forming islands during high temperature annealing.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 63202
- Journal Information:
- Journal of the Electrochemical Society, Vol. 142, Issue 5; Other Information: PBD: May 1995
- Country of Publication:
- United States
- Language:
- English
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