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Title: Sputter deposition with nearly-parallel coating flux

Technical Report ·
OSTI ID:6271940

A method for producing a dense, nearly-parallel flux of sputtered atoms is described. This method allows sputter depositing films having substantially 100% of theoretical density. The sputtering chamber contains a target having a surface that is substantially parallel to the direction of the particles impinging upon the substrate surface, the distance between the most remote portion of the substrate surface receiving the particles and the target surface emitting the particles in a direction parallel to the substrate surface being relatively small. The pressure in the vessel is maintained less than about .65 Pa to limit scattering and permit line-of-sight deposition. The angles of incidence of the particles impinging upon the substrate surface do not vary greatly even when the target surface area is greatly expanded to increase the deposition rate. An experimental sputtering system is described. Deposition rates are given as a function of distance from the target edge and distance from the target plane. Metallography of sputter deposited Ni is presented.

Research Organization:
Battelle Pacific Northwest Labs., Richland, WA (USA)
DOE Contract Number:
AC06-76RL01830
OSTI ID:
6271940
Report Number(s):
PNL-SA-8969A; ON: DE81030107; TRN: 81-016074
Country of Publication:
United States
Language:
English