Mathematical modeling of boron diffusion from boron oxide glass film sources
Mathematical models are developed to examine two alternative means of boron doping from boron-rich glass films. For the planar source diffusion system, in which boron diffusion and glass film growth occur simultaneously at high temperature (900-1200/sup 0/C), glass film growth rates and the degree of doping achieved are predicted. In most cases, the solubility limit of boron in silicon is attained at the silicon surface. It is found that depletion of the boron source wafers used in this process may be slowed considerably by their removal from the reactor after a short time. Model predictions for an alternative method, in which the glass film is pregrown at low temperature (300/sup 0/C) and the diffusion subsequently performed at high temperature, demonstrate a strong dependence of the boron surface concentration on the initial boron content in the pregrown glass film, for concentrations of boron near the solubility limit. The conditions for which a masking film of SiO/sub 2/ is insufficient to prevent boron diffusion into silicon, known as mask failure, are also predicted by the models.
- Research Organization:
- Dept. of AMES/Chemical Engineering, Univ. of California, San Diego, La Jolla, CA (US)
- OSTI ID:
- 6260888
- Journal Information:
- A.I.Ch.E. J.; (United States), Vol. 34:9
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
BORON
DIFFUSION
BOROSILICATE GLASS
ATOM TRANSPORT
SILICON OXIDES
PROTECTIVE COATINGS
BORON OXIDES
CRYSTAL DOPING
DOPED MATERIALS
HIGH TEMPERATURE
LOW TEMPERATURE
MATHEMATICAL MODELS
THIN FILMS
BORON COMPOUNDS
CHALCOGENIDES
COATINGS
ELEMENTS
FILMS
GLASS
MATERIALS
NEUTRAL-PARTICLE TRANSPORT
OXIDES
OXYGEN COMPOUNDS
RADIATION TRANSPORT
SEMIMETALS
SILICON COMPOUNDS
360603* - Materials- Properties
990230 - Mathematics & Mathematical Models- (1987-1989)