{ital In situ} growth of highly oriented Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films by low-temperature metal{endash}organic chemical vapor deposition
Abstract
Highly oriented, polycrystalline Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} (PZT) thin films were successfully grown on RuO{sub 2}/SiO{sub 2}/(001)Si using metal{endash}organic chemical vapor deposition (MOCVD) at 525{degree}C. The orientation of the PZT film was controlled by using MOCVD-deposited highly textured RuO{sub 2} bottom electrodes. A (001)-oriented PZT film was observed for growth on (101)-textured RuO{sub 2}. In contrast, for (110) RuO{sub 2}, the growth of (001) PZT was greatly suppressed while the growth of both (110) and (111) were enhanced, resulting in a poorly (001)-textured polycrystalline film. The as-grown PZT films exhibited a dense columnar microstructure with an average grain size of 150{endash}250 nm. Both PZT films showed excellent ferroelectric properties without any postgrowth annealing. The (001) highly oriented PZT films showed significantly higher values of remnant polarization (P{sub r}=49.7{mu}C/cm{sup 2}) and saturation polarization (P{sub s}=82.5{mu}C/cm{sup 2}). In comparison, for the PZT films grown on (110) RuO{sub 2}, P{sub r} and P{sub s} were 21.5 and 35.4{mu}C/cm{sup 2}, respectively. {copyright} {ital 1998 American Institute of Physics.}
- Authors:
-
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois60439 (United States)
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208 (United States)
- Publication Date:
- OSTI Identifier:
- 624841
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 72; Journal Issue: 13; Other Information: PBD: Mar 1998
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; LEAD COMPOUNDS; PZT; THIN FILMS; CHEMICAL VAPOR DEPOSITION; TEXTURE; FERROELECTRIC MATERIALS; POLYCRYSTALS; GRAIN SIZE; POLARIZATION
Citation Formats
Bai, G, Tsu, I, Wang, A, Foster, C M, Murray, C E, and Dravid, V P. {ital In situ} growth of highly oriented Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films by low-temperature metal{endash}organic chemical vapor deposition. United States: N. p., 1998.
Web. doi:10.1063/1.121118.
Bai, G, Tsu, I, Wang, A, Foster, C M, Murray, C E, & Dravid, V P. {ital In situ} growth of highly oriented Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films by low-temperature metal{endash}organic chemical vapor deposition. United States. https://doi.org/10.1063/1.121118
Bai, G, Tsu, I, Wang, A, Foster, C M, Murray, C E, and Dravid, V P. 1998.
"{ital In situ} growth of highly oriented Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films by low-temperature metal{endash}organic chemical vapor deposition". United States. https://doi.org/10.1063/1.121118.
@article{osti_624841,
title = {{ital In situ} growth of highly oriented Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films by low-temperature metal{endash}organic chemical vapor deposition},
author = {Bai, G and Tsu, I and Wang, A and Foster, C M and Murray, C E and Dravid, V P},
abstractNote = {Highly oriented, polycrystalline Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} (PZT) thin films were successfully grown on RuO{sub 2}/SiO{sub 2}/(001)Si using metal{endash}organic chemical vapor deposition (MOCVD) at 525{degree}C. The orientation of the PZT film was controlled by using MOCVD-deposited highly textured RuO{sub 2} bottom electrodes. A (001)-oriented PZT film was observed for growth on (101)-textured RuO{sub 2}. In contrast, for (110) RuO{sub 2}, the growth of (001) PZT was greatly suppressed while the growth of both (110) and (111) were enhanced, resulting in a poorly (001)-textured polycrystalline film. The as-grown PZT films exhibited a dense columnar microstructure with an average grain size of 150{endash}250 nm. Both PZT films showed excellent ferroelectric properties without any postgrowth annealing. The (001) highly oriented PZT films showed significantly higher values of remnant polarization (P{sub r}=49.7{mu}C/cm{sup 2}) and saturation polarization (P{sub s}=82.5{mu}C/cm{sup 2}). In comparison, for the PZT films grown on (110) RuO{sub 2}, P{sub r} and P{sub s} were 21.5 and 35.4{mu}C/cm{sup 2}, respectively. {copyright} {ital 1998 American Institute of Physics.}},
doi = {10.1063/1.121118},
url = {https://www.osti.gov/biblio/624841},
journal = {Applied Physics Letters},
number = 13,
volume = 72,
place = {United States},
year = {Sun Mar 01 00:00:00 EST 1998},
month = {Sun Mar 01 00:00:00 EST 1998}
}