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Title: {ital In situ} growth of highly oriented Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films by low-temperature metal{endash}organic chemical vapor deposition

Abstract

Highly oriented, polycrystalline Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} (PZT) thin films were successfully grown on RuO{sub 2}/SiO{sub 2}/(001)Si using metal{endash}organic chemical vapor deposition (MOCVD) at 525{degree}C. The orientation of the PZT film was controlled by using MOCVD-deposited highly textured RuO{sub 2} bottom electrodes. A (001)-oriented PZT film was observed for growth on (101)-textured RuO{sub 2}. In contrast, for (110) RuO{sub 2}, the growth of (001) PZT was greatly suppressed while the growth of both (110) and (111) were enhanced, resulting in a poorly (001)-textured polycrystalline film. The as-grown PZT films exhibited a dense columnar microstructure with an average grain size of 150{endash}250 nm. Both PZT films showed excellent ferroelectric properties without any postgrowth annealing. The (001) highly oriented PZT films showed significantly higher values of remnant polarization (P{sub r}=49.7{mu}C/cm{sup 2}) and saturation polarization (P{sub s}=82.5{mu}C/cm{sup 2}). In comparison, for the PZT films grown on (110) RuO{sub 2}, P{sub r} and P{sub s} were 21.5 and 35.4{mu}C/cm{sup 2}, respectively. {copyright} {ital 1998 American Institute of Physics.}

Authors:
; ; ;  [1]; ;  [2]
  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois60439 (United States)
  2. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208 (United States)
Publication Date:
OSTI Identifier:
624841
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 72; Journal Issue: 13; Other Information: PBD: Mar 1998
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; LEAD COMPOUNDS; PZT; THIN FILMS; CHEMICAL VAPOR DEPOSITION; TEXTURE; FERROELECTRIC MATERIALS; POLYCRYSTALS; GRAIN SIZE; POLARIZATION

Citation Formats

Bai, G, Tsu, I, Wang, A, Foster, C M, Murray, C E, and Dravid, V P. {ital In situ} growth of highly oriented Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films by low-temperature metal{endash}organic chemical vapor deposition. United States: N. p., 1998. Web. doi:10.1063/1.121118.
Bai, G, Tsu, I, Wang, A, Foster, C M, Murray, C E, & Dravid, V P. {ital In situ} growth of highly oriented Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films by low-temperature metal{endash}organic chemical vapor deposition. United States. https://doi.org/10.1063/1.121118
Bai, G, Tsu, I, Wang, A, Foster, C M, Murray, C E, and Dravid, V P. 1998. "{ital In situ} growth of highly oriented Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films by low-temperature metal{endash}organic chemical vapor deposition". United States. https://doi.org/10.1063/1.121118.
@article{osti_624841,
title = {{ital In situ} growth of highly oriented Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films by low-temperature metal{endash}organic chemical vapor deposition},
author = {Bai, G and Tsu, I and Wang, A and Foster, C M and Murray, C E and Dravid, V P},
abstractNote = {Highly oriented, polycrystalline Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} (PZT) thin films were successfully grown on RuO{sub 2}/SiO{sub 2}/(001)Si using metal{endash}organic chemical vapor deposition (MOCVD) at 525{degree}C. The orientation of the PZT film was controlled by using MOCVD-deposited highly textured RuO{sub 2} bottom electrodes. A (001)-oriented PZT film was observed for growth on (101)-textured RuO{sub 2}. In contrast, for (110) RuO{sub 2}, the growth of (001) PZT was greatly suppressed while the growth of both (110) and (111) were enhanced, resulting in a poorly (001)-textured polycrystalline film. The as-grown PZT films exhibited a dense columnar microstructure with an average grain size of 150{endash}250 nm. Both PZT films showed excellent ferroelectric properties without any postgrowth annealing. The (001) highly oriented PZT films showed significantly higher values of remnant polarization (P{sub r}=49.7{mu}C/cm{sup 2}) and saturation polarization (P{sub s}=82.5{mu}C/cm{sup 2}). In comparison, for the PZT films grown on (110) RuO{sub 2}, P{sub r} and P{sub s} were 21.5 and 35.4{mu}C/cm{sup 2}, respectively. {copyright} {ital 1998 American Institute of Physics.}},
doi = {10.1063/1.121118},
url = {https://www.osti.gov/biblio/624841}, journal = {Applied Physics Letters},
number = 13,
volume = 72,
place = {United States},
year = {Sun Mar 01 00:00:00 EST 1998},
month = {Sun Mar 01 00:00:00 EST 1998}
}