Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling
Abstract
The physical and electrical properties of semiconductor materials are greatly effected by implantation of boron and other elements. The dose and depth distribution of boron in the near surface region and across interfacial boundaries determine the quality of semiconductor devices. Therefore, a number of analytical techniques has been developed in the last two decades to measure boron doses and depth profiles in semiconductor materials. Neutron Depth Profiling (NDP) is one of the techniques which is capable of determining the boron dose as well as the concentration distribution in the near surface region of semiconductor materials. NDP is a nuclear technique which is based on the absorption reaction of thermal/cold neutrons by certain isotopes of low mass elements e.g., boron-10. In this study, boron doses in semiconductor materials were measured using NDP. The results will be used to complement the measurements done with other techniques and provide a basis for accurate dose calibration of commercial ion implant systems.
- Authors:
-
- Univ. of Texas, Austin, TX (United States); and others
- Publication Date:
- OSTI Identifier:
- 621283
- Report Number(s):
- CONF-9606110-
TRN: 98:002114-0026
- Resource Type:
- Conference
- Resource Relation:
- Conference: 11. international conference on ion implantation technology, Austin, TX (United States), 17-21 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of Ion implantation technology - 96; Ishida, E.; Banerjee, S.; Mehta, S. [eds.] [and others]; PB: 859 p.
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; BORON 10; COLD NEUTRONS; ELECTRICAL PROPERTIES; ION IMPLANTATION; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR DEVICES; DEPTH DOSE DISTRIBUTIONS
Citation Formats
Uenlue, K, Saglam, M, and Wehring, B W. Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling. United States: N. p., 1996.
Web.
Uenlue, K, Saglam, M, & Wehring, B W. Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling. United States.
Uenlue, K, Saglam, M, and Wehring, B W. 1996.
"Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling". United States.
@article{osti_621283,
title = {Nondestructive determination of boron doses in semiconductor materials using neutron depth profiling},
author = {Uenlue, K and Saglam, M and Wehring, B W},
abstractNote = {The physical and electrical properties of semiconductor materials are greatly effected by implantation of boron and other elements. The dose and depth distribution of boron in the near surface region and across interfacial boundaries determine the quality of semiconductor devices. Therefore, a number of analytical techniques has been developed in the last two decades to measure boron doses and depth profiles in semiconductor materials. Neutron Depth Profiling (NDP) is one of the techniques which is capable of determining the boron dose as well as the concentration distribution in the near surface region of semiconductor materials. NDP is a nuclear technique which is based on the absorption reaction of thermal/cold neutrons by certain isotopes of low mass elements e.g., boron-10. In this study, boron doses in semiconductor materials were measured using NDP. The results will be used to complement the measurements done with other techniques and provide a basis for accurate dose calibration of commercial ion implant systems.},
doi = {},
url = {https://www.osti.gov/biblio/621283},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 31 00:00:00 EST 1996},
month = {Tue Dec 31 00:00:00 EST 1996}
}