Planarization of metal films for multilevel interconnects

Patent · Tue Jul 21 00:00:00 EDT 1987

OSTI ID:6200233

Tuckerman, D B

This patent describes an electrical interconnection structure comprising aluminum or aluminum-silicon alloy layers separated by dielectric layers. Each aluminum or alloy layer has been planarized to form a flat surface by eliminating any oxide coating of the aluminum or alloy, forming a passivating and antireflection coating of silicon on the aluminum or alloy. Heating is applied to momentarily melt the layer to form a flat surface prior to the formation of an additional dielectric layer. The metal layers have been patterned after planarization according to a preselected pattern and interconnected through the dielectric layers.

• Assignee: Dept. of Energy, Washington, DC
• Patent Number(s): US 4681795
• OSTI ID: 6200233
• Resource Relation: Patent File Date: Filed date 23 Aug 1985
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM
ETCHING
PASSIVATION
ALUMINIUM ALLOYS
CONNECTORS
FABRICATION
MATERIALS
SILICON ALLOYS
ANTIREFLECTION COATINGS
DIELECTRIC MATERIALS
HEATING
LAYERS
MELTING
OXIDES
ALLOYS
CHALCOGENIDES
COATINGS
CONDUCTOR DEVICES
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
METALS
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
SURFACE FINISHING
360101* - Metals & Alloys- Preparation & Fabrication
420800 - Engineering- Electronic Circuits & Devices- (-1989)