Solar cells made by laser-induced diffusion directly from phosphine gas

Journal Article · Tue Dec 15 00:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92628· OSTI ID:6121621

Turner, G B; Tarrant, D; Pollock, G; Pressley, R; Press, R

A new method for making p-n junctions based on immersion in a transparent dopant gas followed by irradiation with a pulsed laser is presented. An alexandrite laser was used, operating at 0.73 ..mu..m where photolysis of the dopant gas PH/sub 3/ does not occur. Multiple pulses of 2.2--2.7 J/cm/sup 2/ were used to make Si solar cells with total area efficiencies up to 8.6% without benefit of antireflection coatings.

• Research Organization: ARCO Solar Incorporated, Chatsworth, California 91311
• OSTI ID: 6121621
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 39:12
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
RADIATION EFFECTS
ANTIREFLECTION COATINGS
DIFFUSION
DOPED MATERIALS
GASES
LASER RADIATION
P-N JUNCTIONS
PHOSPHINES
PULSES
QUANTUM EFFICIENCY
SOLID STATE LASERS
COATINGS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTROMAGNETIC RADIATION
EQUIPMENT
FLUIDS
JUNCTIONS
LASERS
MATERIALS
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion