GaAlAs gain-guided semiconductor lasers with a curved facet

Journal Article · Mon Nov 23 00:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98537· OSTI ID:6084301

Yamashita, S; Nakatsuka, S; Tanaka, T; Ono, Y; Kajimura, T

GaAlAs gain-guided semiconductor lasers having a curved facet are fabricated by employing reactive ion beam etching. The use of the curved facet permits stabilization of transverse mode in the direction parallel to the junction plane, reduction of astigmatism, and multilongitudinal mode oscillation.

• Research Organization: Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
• OSTI ID: 6084301
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 51:21
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
OSCILLATION MODES
STABILIZATION
ALUMINIUM ARSENIDES
ETCHING
GAIN
GALLIUM ARSENIDES
OPTICAL MODES
PERFORMANCE
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)