Comparison of enhanced device response and predicted x-ray dose enhancement effects on MOS oxides

Conference · Thu Dec 01 00:00:00 EST 1988 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6065364

Fleetwood, D M; Beutler, D E; Lorence, Jr, L J; Draper, B L; Brown, D B; Riewe, L C; Rosenstock, H B; Knott, D P

The response of MOS capacitors to low- and medium-energy x-ray irradiation is investigated as a function of gate material (TaSi or Al), oxide thickness, and electric field. Measured device response is compared with predictions based on discrete ordinates and Monte Carlo code simulations of dose enhancement effects, coupled with recent estimates of electron-hole recombination in MOS oxides. In comparisons of 10-keV x-ray and Co-60 irradiations of Al-gate MOS capacitors at an oxide electric field of 1 MV/cm, it is found that predictions and experiments agree to within better than 20 percent for oxide thicknesses ranging from 35 to 1060 nm. For capacitors having TaSi/Al gates, predictions and experiments agree to within better than 30 percent at 1 MV/cm, with the largest differences occurring for 35-nm gate oxides. At other electric fields, the disagreement between experiment and prediction increases significantly for both Al- and TaSi/Al-gate capacitors, and can be greater than a factor of 2 at applied electric fields below 0.1 MV/cm. For medium energy (-- 100 keV average photon energy) x-ray irradiations, the enhanced device response exhibits a much stronger dependence on endpoint bremsstrahlung energy than expected from TIGERP or CEPXS/ONETRAN simulations. Implications for hardness assurance testing are discussed.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Naval Research Lab., Washington, DC (US); L and M Assoc., Albuquerque, NM (US); Sachs/Freeman Assoc., Landover, MD (US); Technical Support Corp., Albuquerque, NM (US)
• OSTI ID: 6065364
• Report Number(s): CONF-880730-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. 35:6; Conference: 25. annual conference on nuclear and space radiation effects, Portland, OR, USA, 12 Jul 1988
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
ALUMINIUM
PHYSICAL RADIATION EFFECTS
MOS TRANSISTORS
RADIATION HARDENING
SILICON OXIDES
TANTALUM
BREMSSTRAHLUNG
CAPACITORS
COBALT 60
DISCRETE ORDINATE METHOD
ELECTRIC FIELDS
ELECTRICAL INSULATORS
GATING CIRCUITS
IRRADIATION
MONTE CARLO METHOD
QUALITY ASSURANCE
RECOMBINATION
SOLID-STATE PLASMA
THICKNESS
X RADIATION
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
CHALCOGENIDES
COBALT ISOTOPES
DIMENSIONS
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
HARDENING
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
IONIZING RADIATIONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
METALS
MINUTES LIVING RADIOISOTOPES
NUCLEI
ODD-ODD NUCLEI
OXIDES
OXYGEN COMPOUNDS
PLASMA
RADIATION EFFECTS
RADIATIONS
RADIOISOTOPES
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
TRANSISTORS
TRANSITION ELEMENTS
YEARS LIVING RADIOISOTOPES
654001* - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
360605 - Materials- Radiation Effects