Influence of the base region on the performance of silicon solar cells

Conference · Tue May 01 00:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:6026315

Ruiz, J M; Cid, M; Cuevas, A

The short-circuit current, open-circuit voltage, fill factor and conversion efficiency of silicon p/sup +/nn/sup +/ and n/sup +/pp/sup +/ BSF solar cells as functions of base doping and irradiance are analysed by means of a new theoretical model which is valid for any injection level in the base region. Some peculiar phenomena such as the superlinearity of the uncompensated photocurrent with irradiance and the degradation of the short-circuit current and of the efficiency at very high irradiances are clearly explained by the model and shown to be related to the ohmic electric field in the base region. Evidence of a systematic error in common spectral response measurements with white bias light is also given. Both theoretical and experimental results demonstrate the feasibility of high base resistivity high-efficiency solar cells especially of the p/sup +/nn/sup +/ type.

• Research Organization: Instituto Energia Solar, E.T.S.I., Telecomunicacion, Madrid
• OSTI ID: 6026315
• Report Number(s): CONF-840561-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
ELECTRIC CONDUCTIVITY
PERFORMANCE
ANALYTICAL SOLUTION
CRYSTAL DOPING
EFFICIENCY
ELECTRIC POTENTIAL
ELECTRICAL FAULTS
FEASIBILITY STUDIES
FUNCTIONAL ANALYSIS
MATHEMATICAL MODELS
P-N JUNCTIONS
PHOTOCURRENTS
SPECTRAL RESPONSE
CURRENTS
DIRECT ENERGY CONVERTERS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
EQUIPMENT
JUNCTIONS
MATHEMATICS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion