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Title: Photoquenching phenomenon enhanced by proton irradiation in semi-insulating GaAs

In undoped semi-insulating GaAs, we have found that the quenching phenomena of photoconductance and infrared absorption are enhanced by proton irradiation above 10{sup 13} /cm{sup 2}, accompanied by an increase in near-band-edge infrared absorption. These phenomena disappear with the annihilation of the proton-induced near-band absorption by annealing at 350 {degree}C. It is suggested that the enhanced photoquenching phenomena arise from the increase in the quenchable component due to the transition from the ionized midgap electron trap (EL2{sup +}) to the neutral EL2{sup 0}.
Authors:
; ;  [1] ; ; ;  [2] ;  [3]
  1. (College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan (JP))
  2. (Electrotechnical Laboratory, Tsukuba, Ibaraki 305, (Japan))
  3. (The Institute of Physical and Chemical Research, Wako, Saitama 315-01, (Japan))
Publication Date:
OSTI Identifier:
6012121
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; (USA); Journal Volume: 68:12
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; PHYSICAL RADIATION EFFECTS; ABSORPTIVITY; INFRARED SPECTRA; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; PROTONS; TEMPERATURE DEPENDENCE; ARSENIC COMPOUNDS; ARSENIDES; BARYONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; HADRONS; NUCLEONS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; SPECTRA 360605* -- Materials-- Radiation Effects