Surface accumulation of hydrogen during capless annealing of InP

Journal Article · Mon Jun 19 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101060· OSTI ID:6001995

Haussler, W

InP samples, which had received a capless anneal in a phosphine/hydrogenatmosphere, were examined for hydrogen contamination by secondary-ion massspectrometry. It is found that hydrogen accumulates at the InP surface duringannealing. Annealing of Be-implanted InP leads to similar profile shapes for theBe and H atoms. Passivation of the Be acceptors, if effective at all, appears tobe of only minor significance.

• Research Organization: Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 Munchen 83, Federal Republic of Germany(DE)
• OSTI ID: 6001995
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 54:25
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
ANNEALING
BERYLLIUM
CONTAMINATION
HYDROGEN ADDITIONS
IMPURITIES
ION IMPLANTATION
MASS SPECTROSCOPY
SURFACE PROPERTIES
VAPOR PHASE EPITAXY
ALKALINE EARTH METALS
ELEMENTS
EPITAXY
HEAT TREATMENTS
INDIUM COMPOUNDS
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SPECTROSCOPY
360102* - Metals & Alloys- Structure & Phase Studies