Radiation-hardened nonvolatile MNOS RAM

Conference · Sat Jan 01 00:00:00 EST 1983

OSTI ID:5953052

Wrobel, T F; Dodson, W H; Hash, G L; Jones, R V; Nasby, R D; Olson, R J

A radiation hardened nonvolatile MNOS RAM is being developed at Sandia National Laboratories. The memory organization is 128 x 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The devices have memory retention after a dose-rate exposure of 1E12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA); Air Force Weapons Lab., Kirtland AFB, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5953052
• Report Number(s): SAND-83-1542C; CONF-830714-5; ON: DE83014602; TRN: 83-019325
• Resource Relation: Conference: 20. IEEE annual conference on nuclear and space radiation effects, Gatlinburg, TN, USA, 18 Jul 1983; Other Information: Portions are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
SEMICONDUCTOR STORAGE DEVICES
RADIATION HARDENING
ANNEALING
TESTING
TRANSIENTS
HARDENING
HEAT TREATMENTS
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
420800 - Engineering- Electronic Circuits & Devices- (-1989)