Comparison of the radiation hardness of various VLSI technologies for defense applications

Conference · Tue Jan 01 00:00:00 EST 1985

OSTI ID:5948720

Gibbon, C F

In this review the radiation hardness of various potential very large scale (VLSI) IC technologies is evaluated. IC scaling produces several countervailing trends. Reducing vertical dimensions tends to increase total dose hardness, while reducing lateral feature sizes may increase susceptibility to transient radiation effects. It is concluded that during the next decade at least, silicon complimentary MOS (CMOS), perhaps on an insulating substrate (SOI) will be the technology of choice for VLSI in defense systems.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5948720
• Report Number(s): SAND-84-2074C; CONF-850586-1; ON: DE85006973
• Resource Relation: Conference: NATO/AGARD symposium, Lisbon, Portugal, 20 May 1985
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
INTEGRATED CIRCUITS
RADIATION HARDENING
COSMIC RADIATION
NEUTRONS
BARYONS
ELECTRONIC CIRCUITS
ELEMENTARY PARTICLES
FERMIONS
HADRONS
HARDENING
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
NUCLEONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems