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Title: Pressure studies of deep levels in semiconductors

The effects of pressure on the energetics and kinetics of electron emission and capture processes by several important deep levels in Si are discussed. The results yield the first quantitative measures of the breathing mode lattice relaxations accompanying these processes. 2 refs., 1 fig.
Authors:
Publication Date:
OSTI Identifier:
5916296
Report Number(s):
SAND-89-1828C; CONF-890798-3
ON: DE89015851
DOE Contract Number:
AC04-76DP00789
Resource Type:
Conference
Resource Relation:
Conference: AIRAPT and EHPRG international high pressure science and technology conference, Paderborn, Germany, F.R., 17-21 Jul 1989; Other Information: Portions of this document are illegible in microfiche products
Research Org:
Sandia National Labs., Albuquerque, NM (USA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SEMICONDUCTOR MATERIALS; ELECTRON EMISSION; CRYSTAL LATTICES; ELECTRON CAPTURE; ENERGY LEVELS; KINETICS; PRESSURE EFFECTS; PRESSURE MEASUREMENT; SILICON; CAPTURE; CRYSTAL STRUCTURE; ELEMENTS; EMISSION; MATERIALS; SEMIMETALS 360603* -- Materials-- Properties; 656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)