Pressure studies of deep levels in semiconductors
The effects of pressure on the energetics and kinetics of electron emission and capture processes by several important deep levels in Si are discussed. The results yield the first quantitative measures of the breathing mode lattice relaxations accompanying these processes. 2 refs., 1 fig.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5916296
- Report Number(s):
- SAND-89-1828C; CONF-890798-3; ON: DE89015851
- Resource Relation:
- Journal Volume: 3; Journal Issue: 1-6; Conference: AIRAPT and EHPRG international high pressure science and technology conference, Paderborn, Germany, F.R., 17-21 Jul 1989; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SEMICONDUCTOR MATERIALS
ELECTRON EMISSION
CRYSTAL LATTICES
ELECTRON CAPTURE
ENERGY LEVELS
KINETICS
PRESSURE EFFECTS
PRESSURE MEASUREMENT
SILICON
CAPTURE
CRYSTAL STRUCTURE
ELEMENTS
EMISSION
MATERIALS
SEMIMETALS
360603* - Materials- Properties
656002 - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SEMICONDUCTOR MATERIALS
ELECTRON EMISSION
CRYSTAL LATTICES
ELECTRON CAPTURE
ENERGY LEVELS
KINETICS
PRESSURE EFFECTS
PRESSURE MEASUREMENT
SILICON
CAPTURE
CRYSTAL STRUCTURE
ELEMENTS
EMISSION
MATERIALS
SEMIMETALS
360603* - Materials- Properties
656002 - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)