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Title: Effect of a residual atmosphere containing carbon on the electrophysical properties of titanium and vanadium surface layers deposited on Si(SiO/sub 2/) in a vacuum

Journal Article · · Sov. Microelectron.; (United States)
OSTI ID:5895713

The authors consider the effect of a carbon-containing residual atmosphere on the superconductive properties and chemical composition of a silicide grown on an SiO/sub 2/ surface by deposition of V in a vacuum, as well as the rectifying properties of Ti-n-Si and V-p-Si contacts formed by deposition of Ti and V on Si in vacuum. The V and Ti films were deposited in vacuum at a residual gas pressure of no more than (2-8) x 10/sup -4/ Pa on an Si(SiO/sub 2/) surface heated to 200-1200/sup 0/C. Subsequent high-temperature annealing of the V-p-Si structures at temperatures of 200-1200/sup 0/C was performed in the vacuum chamber after depositing the vanadium layer for 15-30 min. In a solid-state reaction on the V-SiO/sub 2/ phase boundary, the superconductive silicide V/sub 3/Si is formed and grows, while on the V-Si boundary, VSi/sub 2/ is formed. When a vanadium film of thickness d = 50 nm is grown on SiO/sub 2/, and heated to 1000/sup 0/C in a vacuum with a carbon-containing residual atmosphere, the phase VSi/sub 2/ is formed, and only when the vanadium thickness is increased does V/sub 3/Si form and superconductive properties appear in the surface layer.

OSTI ID:
5895713
Journal Information:
Sov. Microelectron.; (United States), Vol. 14:6; Other Information: Translated from Mikroelektronika Akad. Nauk SSSR; 14: No. 6, 548-551(Nov-Dec 1985)
Country of Publication:
United States
Language:
English

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