Low-temperature reaction in tungsten layers deposited on Si(100) substrates

Journal Article · Mon Jul 17 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.102382· OSTI ID:5890182

Cros, A; Pierrisnard, R; Pierre, F; Layet, J M; Meyer, F

Tungsten layers have been evaporated with an electron gun under ultrahigh vacuum conditions on atomically clean Si(100) substrates. The metallic films deposited on substrates at room temperature are mostly in the body-centered-cubic /alpha/ phase of tungsten. Upon annealing at 400 /degree/C, the bulk of the layer stays unreacted but we have observed the appearance of cracks in the metallic film and the segregation of silicon atoms at the surface. These atoms are not in the form of crystalline WSi/sub 2/.

• Research Organization: U. A. CNRS 783, Department of Physics, Faculty of Luminy, 13288 Marseille Cedex 9, France (FR); CRMC2-L. P. CNRS 7251, Department of Physics, Faculty of Luminy 13288, Marseille Cedex 9, France; IEF, University of Paris-Sud, Bat. 220, 91405 Orsay Cedex, France
• OSTI ID: 5890182
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 55:3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
CHEMICAL REACTIONS
DIFFUSION
TUNGSTEN
ATOM TRANSPORT
TUNGSTEN SILICIDES
SYNTHESIS
ANNEALING
CRACKS
HIGH TEMPERATURE
SEGREGATION
THIN FILMS
ULTRAHIGH VACUUM
VACUUM EVAPORATION
ELEMENTS
EVAPORATION
FILMS
HEAT TREATMENTS
METALS
NEUTRAL-PARTICLE TRANSPORT
PHASE TRANSFORMATIONS
RADIATION TRANSPORT
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN COMPOUNDS
360104* - Metals & Alloys- Physical Properties
360101 - Metals & Alloys- Preparation & Fabrication