Charge accumulation in an MNOS structure with carrier injection from the field electrode

Journal Article · Wed Jan 01 00:00:00 EST 1986 · Sov. Microelectron.; (United States)

OSTI ID:5848353

Maslovskii, V M; Nagin, A P; Chernyshev, Yu R

The authors propose a method for determining the parameters of trapping centers by injecting electrons into the insulator of an MIS structure from the field electrode, when a negative voltage pulse with amplitude U and duration t is applied to it. The results indicate that in silicon nitride, just as in silicon oxide, degradation is apparently caused by the trapping of holes in traps formed by Si-H bonds. The trapping of a hole stimulates the breaking of the bond and the appearance of a mobile H/sup +/ ion. In this case, the mobile H/sup +/ ions, appearing as a result of the flow of the hole current, passivate the incomplete bonds of the silicon atoms and thereby decrease the concentration of electron-trapping centers.

• OSTI ID: 5848353
• Journal Information: Sov. Microelectron.; (United States), Vol. 14:3; Other Information: Translated from Mikroelektronika Akad. Nauk SSSR; 14: No. 3, 239-242(May-Jun 1985)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
CARRIER DENSITY
CHARGE COLLECTION
SILICON NITRIDES
SILICON OXIDES
AMORPHOUS STATE
CRYSTAL DEFECTS
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
ELECTRON MOBILITY
ELECTRON TRANSFER
ELECTRONS
HOLE MOBILITY
HOLES
HYDROGEN COMPOUNDS
ION MOBILITY
SEMICONDUCTOR MATERIALS
THIN FILMS
TRAPPING
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FERMIONS
FILMS
LEPTONS
MATERIALS
MOBILITY
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PARTICLE MOBILITY
PHYSICAL PROPERTIES
PNICTIDES
SILICON COMPOUNDS
360204* - Ceramics
Cermets
& Refractories- Physical Properties
360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies