Numerical simulation of melt convection in Czochralski growth

Conference · Thu Jan 01 00:00:00 EST 1987

OSTI ID:5848171

Rajaram, S

The temperature distribution and fluid flow in the crucible for growth of silicon crystals by the Czochralski process are obtained by simultaneously solving the Navier-Stokes equations and the energy equation numerically using finite differences. Probable flows are outlined for combinations of forced convection due to crystal rotation and natural convection due to imposed temperature gradients. Crystal rotation appears to be effective in isolating the crystal growth interface from the deleterious effects of buoyant convective flow. Crucible rotation counter to crystal rotation suppresses forced convection due to crystal rotation and imparts rotational velocity to a large portion of the melt. An increase in the aspect ratio of the melt (ratio of melt depth to crucible radius ) reduces thermal convection while thermal radiation losses from the free surface of the melt enhances it.

• OSTI ID: 5848171
• Report Number(s): CONF-861211-
• Resource Relation: Conference: American Society of Mechanical Engineers winter meeting, Anaheim, CA, USA, 7 Dec 1986; Other Information: Technical Paper 86-WA/HT-12
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
CRYSTAL GROWTH
THERMODYNAMICS
ANGULAR VELOCITY
CONVECTION
CRYSTALLIZATION
CZOCHRALSKI METHOD
HEAT LOSSES
INTERFACES
MATHEMATICAL MODELS
MELTING
NATURAL CONVECTION
NAVIER-STOKES EQUATIONS
NUMERICAL SOLUTION
TEMPERATURE DISTRIBUTION
TEMPERATURE GRADIENTS
THERMAL RADIATION
CRYSTAL GROWTH METHODS
DIFFERENTIAL EQUATIONS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY LOSSES
ENERGY TRANSFER
EQUATIONS
HEAT TRANSFER
LOSSES
MASS TRANSFER
PARTIAL DIFFERENTIAL EQUATIONS
PHASE TRANSFORMATIONS
RADIATIONS
SEMIMETALS
VELOCITY
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies