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Title: Physical mechanisms contributing to device ''REBOUND''

Abstract

The physical mechanisms that produce rebound have been identified. The positive increase in threshold voltage during a bias anneal is due to annealing of oxide trapped charge. Rebound can be predicted by measuring the contribution to the threshold voltage from radiation-induced interface states immediately after irradiation.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Laboratories, Division 2144, Albuquerque, New Mexico 87185
OSTI Identifier:
5832805
Resource Type:
Journal Article
Journal Name:
IEEE Trans. Nucl. Sci.; (United States)
Additional Journal Information:
Journal Volume: NS-31:6
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; SEMICONDUCTOR DEVICES; PHYSICAL RADIATION EFFECTS; ANNEALING; ELECTRIC CHARGES; ELECTRIC POTENTIAL; INTERFACES; OXIDES; POST-IRRADIATION EXAMINATION; TRAPPING; CHALCOGENIDES; HEAT TREATMENTS; OXYGEN COMPOUNDS; RADIATION EFFECTS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems

Citation Formats

Schwank, J R, Dressendorfer, P V, McWhorter, P J, Sexton, F W, Turpin, D C, and Winokur, P S. Physical mechanisms contributing to device ''REBOUND''. United States: N. p., 1984. Web. doi:10.1109/TNS.1984.4333525.
Schwank, J R, Dressendorfer, P V, McWhorter, P J, Sexton, F W, Turpin, D C, & Winokur, P S. Physical mechanisms contributing to device ''REBOUND''. United States. https://doi.org/10.1109/TNS.1984.4333525
Schwank, J R, Dressendorfer, P V, McWhorter, P J, Sexton, F W, Turpin, D C, and Winokur, P S. 1984. "Physical mechanisms contributing to device ''REBOUND''". United States. https://doi.org/10.1109/TNS.1984.4333525.
@article{osti_5832805,
title = {Physical mechanisms contributing to device ''REBOUND''},
author = {Schwank, J R and Dressendorfer, P V and McWhorter, P J and Sexton, F W and Turpin, D C and Winokur, P S},
abstractNote = {The physical mechanisms that produce rebound have been identified. The positive increase in threshold voltage during a bias anneal is due to annealing of oxide trapped charge. Rebound can be predicted by measuring the contribution to the threshold voltage from radiation-induced interface states immediately after irradiation.},
doi = {10.1109/TNS.1984.4333525},
url = {https://www.osti.gov/biblio/5832805}, journal = {IEEE Trans. Nucl. Sci.; (United States)},
number = ,
volume = NS-31:6,
place = {United States},
year = {Sat Dec 01 00:00:00 EST 1984},
month = {Sat Dec 01 00:00:00 EST 1984}
}