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Title: GaAs solid state detectors for physics at the LHC

Journal Article · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5830455
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  1. Univ. of Glasgow, (United Kingdom). Dept. of Electrical and Electronic Engineering
  2. CERN, Geneva (Switzerland)
  3. Univ. of Sheffield, (United Kingdom). Dept. of Physics
  4. dell'Univ., Florence (Italy). Dipt. di Fisica INFN, Florence (Italy)
  5. dell'Univ., Bologna (Italy). Dipt. of Fisica INFN, Bologna (Italy)
  6. Rutherford-Appleton Lab., Oxon (United Kingdom)
  7. dell'Univ., Modena (Italy). Dipt. di Fiscia INFN, Modena (Italy)
  8. Univ. of Glasgow, (United Kingdom). Dept. of Physics and Astronomy

Progress with Schottky diode and p i n diode GaAs detectors for minimum ionizing particles is reported here. The radiation hardness and potential speed of simple diodes is shown to be more than competitive with silicon detectors. A discussion is given of the present understanding of the charge transport mechanism in the detectors as it influences their charge collection efficiency. Early results from micro-strip detectors are also described, (which are relevant for high radiation regions of LHC detectors near the beam pipe and in the forward region).

OSTI ID:
5830455
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 40:4; ISSN 0018-9499
Country of Publication:
United States
Language:
English