Development of components for the high brightness laser. Final report May 77-Jun 80
In 1979 DBR lasers were fabricated and their properties studied. Further investigations were undertaken of the beam expander, to determine its potential for the high brightness laser. From this data it was determined that a design change for the high brightness laser is required. This design change is described. In addition, measurements were made on laser amplification to compare this method of achieving higher power compared to the coupled diode arrays. Finally, as a spin-off of this research, a new design for a single mode laser was discovered, using the active/passive laser, a configuration which was fabricated as a first step toward fabrication of DBR lasers. Each of these research efforts are described in this report. Monolithic integration of the necessary components on one substrate for the high brightness laser has been hindered by problems in material and fabrication uniformity. This will be described, and projections for future development will be outlined.
- Research Organization:
- University of Southern California, Los Angeles (USA). Center for Laser Studies
- OSTI ID:
- 5722735
- Report Number(s):
- AD-A-103652/4
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
DESIGN
AMPLIFIERS
BRAGG REFLECTION
BRIGHTNESS
FABRICATION
GALLIUM ARSENIDES
LASER RADIATION
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
EQUIPMENT
GALLIUM COMPOUNDS
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
REFLECTION
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)