skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Photodissociation of semiconductor positive cluster ions

Journal Article · · J. Chem. Phys.; (United States)
DOI:https://doi.org/10.1063/1.454145· OSTI ID:5714663

Laser photofragmentation of Si, Ge, and GaAs positive cluster ions prepared by laser vaporization and supersonic beam expansion has been investigated using tandem time-of-flight mass spectrometry. Si clusters up to size 80, Ge clusters to size 40, and GaAs clusters up to a total of 31 atoms were studied. Si/sup +//sub n/ and Ge/sup +//sub n/ for n = 12--26 give daughter ions of about half their original size. For both Si and Ge, this apparent positive ion fissioning appears to go over with increasing n to neutral loss of seven and ten, but for Si/sup +//sub n/ the range of n values where this is observed is rather small. At low fluences, the larger Ge/sup +//sub n/ clusters up to the maximum size observed (50) sequentially lose Ge/sub 10/ (and in some cases with lower intensity Ge/sub 7/). Larger Si/sup +//sub n/ clusters (n>30) always fragment primarily to produce positive ion clusters in the 6--11 size range with a subsidiary channel of loss of a single Si atom. At high laser fluences, Ge/sup +//sub n/ also fragments to produce primarily positive ion clusters in the 6--11 size range with an intensity pattern essentially identical to Si/sup +//sub n/ at similar fluences. Ga/sub x/As/sup +//sub y/ clusters lose one or more atoms in what is probably a sequential process with positive ion clusters in which the total number of atoms, x+y, is odd being more prominent.

Research Organization:
Rice Quantum Institute, Departments of Chemistry and Electrical Engineering, Rice University, Houston, Texas 77251
OSTI ID:
5714663
Journal Information:
J. Chem. Phys.; (United States), Vol. 88:3
Country of Publication:
United States
Language:
English