Defect Donor and Acceptor in GaN

Journal Article · Mon Sep 01 00:00:00 EDT 1997 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.79.2273· OSTI ID:554223

Look, D C; Reynolds, D C; Hemsky, J W ^[1]; Sizelove, J R; Jones, R L ^[2]; Molnar, R J ^[3]

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1. University Research Center, Wright State University, Dayton, Ohio 45435 (United States)
2. Avionics Directorate, WL/AADP, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)
3. Massachusetts Institute of Technology/Lincoln Laboratory, 244 Wood Street, Lexington, Massachusetts 02173 (United States)

High-energy (0.7{endash}1MeV) electron irradiation in GaN grown on sapphire produces shallow donors and deep or shallow acceptors at equal rates, 1{plus_minus}0.2 cm{sup {minus}1}. The data, in conjunction with theory, are consistent only with the shallow donor being the N vacancy, and the acceptor the N interstitial. The N-vacancy donor energy is 64{plus_minus}10 meV, much larger than the value of 18meV found for the residual donor (probably Si) in this material. The Hall-effect measurements also reveal a degenerate n -type layer at the GaN/sapphire interface which must be accounted for to get the proper donor activation energy. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 554223
• Journal Information: Physical Review Letters, Vol. 79, Issue 12; Other Information: PBD: Sep 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM NITRIDES
PHYSICAL RADIATION EFFECTS
HALL EFFECT
ELECTRON COLLISIONS
SAPPHIRE
EV RANGE 100-1000
CRYSTAL DEFECTS
ELECTRONIC STRUCTURE