Dopant diffusion in tungsten silicide

Journal Article · Thu Apr 01 00:00:00 EST 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331050· OSTI ID:5533364

Pan, P; Hsieh, N; Geipel, Jr, H J; Slusser, G J

The dopant (B, P, and As) redistribution in a silicide on polycrystalline silicon structure after annealing at 800 and 1000 /sup 0/C was studied. The distribution of boron was found to be quite different from these of phosphorus and arsenic. At 1000 /sup 0/C, the distribution coefficient for boron at the WSi/sub 2//polycrystalline silicon interface was found to be 2.7. The solubilities of phosphorus and arsenic in WSi/sub 2/ at 1000 /sup 0/C were estimated to be 6 x 10/sup 19/ and 1.6 x 10/sup 19/ atoms/cm/sup 3/, respectively. At 800 /sup 0/C, the diffusion coefficient for the dopants was found to be equal to, or greater than 3.3 x 10/sup -12/ cm/sup 2//s, which is at least three orders of magnitude larger than in silicon.

• Research Organization: IBM, General Technology Division, Essex Junction, Vermont 05452
• OSTI ID: 5533364
• Journal Information: J. Appl. Phys.; (United States), Vol. 53:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
DIFFUSION
BORON
PHOSPHORUS
TUNGSTEN SILICIDES
DOPED MATERIALS
ANNEALING
DATA
INTERFACES
POLYCRYSTALS
SILICON
SOLUBILITY
SPATIAL DISTRIBUTION
VERY HIGH TEMPERATURE
CRYSTALS
DISTRIBUTION
ELEMENTS
HEAT TREATMENTS
INFORMATION
MATERIALS
NONMETALS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
360601* - Other Materials- Preparation & Manufacture