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Title: Influence of photoexcitation on hopping conduction in neutron-transmutation-doped GaAs

The nature of the tunneling-assisted hopping conduction in neutron-transmutation-doped GaAs has been studied under photoexcitation with a photon energy of 1.32 eV. It is found that the dopants activated by annealing around 400 /sup 0/C provide the electrons to the defect levels originating the hopping conduction even when under photoexcitation. The hopping conduction under photoexcitation is affected by quenching in photoconductance below 120 K concerned with the main electron trap (EL2) and/or the As antisite defect (As/sub Ga/) induced by the neutron irradiation. The photoconductance of the samples with a lower radiation damage, As/sub Ga/less than or equal to1 x 10/sup 18/ cm/sup -3/, consists of the coexistence of the hopping and band conductions.
Authors:
; ; ; ; ;
Publication Date:
OSTI Identifier:
5529243
Resource Type:
Journal Article
Resource Relation:
Journal Name: J. Appl. Phys.; (United States); Journal Volume: 63:4
Research Org:
College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184, Japan
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; PHYSICAL RADIATION EFFECTS; ANNEALING; CRYSTAL DEFECTS; DAMAGE; ELECTRONIC STRUCTURE; PHOTOCONDUCTIVITY; TRAPPING; TRAPS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; HEAT TREATMENTS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS 360605* -- Materials-- Radiation Effects