FT-PL analysis of CIGS/CdS/Zno interfaces
- National Renewable Energy Laboratory, Golden, Colorado 80401-3393 (United States)
High-quality copper indium gallium diselenide (CIGS) films were subjected to a variety of surface treatments attendant to and including deposition of CdS and/or ZnO junctions or buffer layers. The resulting devices were analyzed at 87 K using Fourier transform photoluminescence (FT-PL) spectroscopy as part of a battery of analytical procedures, including surface analysis, ellipsometry, and I{endash}V measurements, designed to elucidate the influences of the several interfaces on device performance. Our FT-PL system was upgraded with a miniature Joule-Thomson cryostat and a helium-neon laser excitation source to enable collection of highly-resolved, continuous PL spectra from 950{endash}1750 nm. The PL intensity enhancements measured with the upgraded FT-PL system for devices fabricated using chemical bath deposition (CBD) of CdS, with or without a ZnO electrode, are much greater than for devices incorporating physical vapor deposited (PVD) CdS or ZnO/CIGS interfaces. Exposure of the CIGS films to components of the CBD solution alone, without deposition of CdS, also increases PL intensity, implying a reduction in the rate of non-radiative recombination in the films. Application of CBD CdS or a CBD background solution to the CIGS shifted its PL spectrum to shorter wavelengths, while application of PVD CdS or ZnO to the CIGS broadened its PL spectrum at longer wavelengths. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 552858
- Report Number(s):
- CONF-961178-; ISSN 0094-243X; TRN: 9722M0052
- Journal Information:
- AIP Conference Proceedings, Vol. 394, Issue 1; Conference: National Renewable Energy Laboratory (NREL)/Sandia National Laboratories (SNL) photovoltaics program review meeting, Lakewood, CO (United States), 18-22 Nov 1996; Other Information: PBD: Feb 1997
- Country of Publication:
- United States
- Language:
- English
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