C sub 60 bonding and energy-level alignment on metal and semiconductor surfaces
Abstract
Electronic-structure studies of C{sub 60} condensed on metal surfaces show that the energy levels derived from the fullerene align with the substrate Fermi level, not the vacuum level. For thick layers grown on metals at 300 K, the binding energy of the C 1{ital s} main line was 284.7 eV and the center of the band derived from the highest occupied molecular orbital was 2.25 eV below the Fermi level. For monolayer amounts of C{sub 60} adsorbed on Au and Cr, however, the C 1{ital s} line was broadened asymmetrically and shifted to lower binding energy, the shakeup features were less distinct, and a band derived from the lowest unoccupied molecular orbital (LUMO) was shifted toward the Fermi level. These monolayer effects demonstrate partial occupancy of a LUMO-derived state, dipole formation, and changes in screening that are associated with LUMO occupancy. Results for C{sub 60} monolayers on {ital n}-type GaAs(110) show transfer of {le}0.02 electron per fullerene, as gauged by substrate band bending. For C{sub 60} on {ital p}-type GaAs, however, the bands remained flat because electron redistribution was not possible, and the C{sub 60}-derived energy levels were aligned to the substrate vacuum level.
- Authors:
-
- Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis, Minnesota 55404 (United States)
- Rice Quantum Institute and Departments of Chemistry and Physics, Rice University, Houston, Texas 77251 (United States)
- Publication Date:
- OSTI Identifier:
- 5524990
- Resource Type:
- Journal Article
- Journal Name:
- Physical Review, B: Condensed Matter; (United States)
- Additional Journal Information:
- Journal Volume: 44:24; Journal ID: ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CARBON; ELECTRONIC STRUCTURE; BISMUTH; BONDING; CHROMIUM; EMISSION SPECTROSCOPY; FERMI LEVEL; GALLIUM ARSENIDES; GOLD; MAGNESIUM; MOLECULAR CRYSTALS; SILVER; ULTRAHIGH VACUUM; ALKALINE EARTH METALS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTALS; ELEMENTS; ENERGY LEVELS; FABRICATION; GALLIUM COMPOUNDS; JOINING; METALS; NONMETALS; PNICTIDES; SPECTROSCOPY; TRANSITION ELEMENTS; 360606* - Other Materials- Physical Properties- (1992-)
Citation Formats
Ohno, T R, Chen, Y, Harvey, S E, Kroll, G H, Weaver, J H, Haufler, R E, and Smalley, R E. C sub 60 bonding and energy-level alignment on metal and semiconductor surfaces. United States: N. p., 1991.
Web. doi:10.1103/PhysRevB.44.13747.
Ohno, T R, Chen, Y, Harvey, S E, Kroll, G H, Weaver, J H, Haufler, R E, & Smalley, R E. C sub 60 bonding and energy-level alignment on metal and semiconductor surfaces. United States. https://doi.org/10.1103/PhysRevB.44.13747
Ohno, T R, Chen, Y, Harvey, S E, Kroll, G H, Weaver, J H, Haufler, R E, and Smalley, R E. 1991.
"C sub 60 bonding and energy-level alignment on metal and semiconductor surfaces". United States. https://doi.org/10.1103/PhysRevB.44.13747.
@article{osti_5524990,
title = {C sub 60 bonding and energy-level alignment on metal and semiconductor surfaces},
author = {Ohno, T R and Chen, Y and Harvey, S E and Kroll, G H and Weaver, J H and Haufler, R E and Smalley, R E},
abstractNote = {Electronic-structure studies of C{sub 60} condensed on metal surfaces show that the energy levels derived from the fullerene align with the substrate Fermi level, not the vacuum level. For thick layers grown on metals at 300 K, the binding energy of the C 1{ital s} main line was 284.7 eV and the center of the band derived from the highest occupied molecular orbital was 2.25 eV below the Fermi level. For monolayer amounts of C{sub 60} adsorbed on Au and Cr, however, the C 1{ital s} line was broadened asymmetrically and shifted to lower binding energy, the shakeup features were less distinct, and a band derived from the lowest unoccupied molecular orbital (LUMO) was shifted toward the Fermi level. These monolayer effects demonstrate partial occupancy of a LUMO-derived state, dipole formation, and changes in screening that are associated with LUMO occupancy. Results for C{sub 60} monolayers on {ital n}-type GaAs(110) show transfer of {le}0.02 electron per fullerene, as gauged by substrate band bending. For C{sub 60} on {ital p}-type GaAs, however, the bands remained flat because electron redistribution was not possible, and the C{sub 60}-derived energy levels were aligned to the substrate vacuum level.},
doi = {10.1103/PhysRevB.44.13747},
url = {https://www.osti.gov/biblio/5524990},
journal = {Physical Review, B: Condensed Matter; (United States)},
issn = {0163-1829},
number = ,
volume = 44:24,
place = {United States},
year = {Sun Dec 15 00:00:00 EST 1991},
month = {Sun Dec 15 00:00:00 EST 1991}
}