Neutron depth profiling measurements for implanted boron-10 characterization in semiconductor materials
- Univ. of Texas, Austin, TX (United States)
The implantation of boron and other elements affects the physical and electrical properties of semiconductor materials. The quality of semiconductor devices is determined mainly by the dose and depth distribution of boron in the near-surface region and across interfacial boundaries. The capability to measure these quantities accurately is becoming more important with the production of {open_quotes}shallow junction{close_quotes} devices. A number of techniques are available to measure the boron doses and depth distribution in semiconductor materials, some of which have been developed in the past two decades. Traditionally, the semiconductor industry uses second ion mass spectroscopy (SIMS) for this purpose.
- OSTI ID:
- 552327
- Report Number(s):
- CONF-971125-; ISSN 0003-018X; TRN: 97:005809-0017
- Journal Information:
- Transactions of the American Nuclear Society, Vol. 77; Conference: 1997 American Nuclear Society (ANS) winter meeting, Albuquerque, NM (United States), 16-20 Nov 1997; Other Information: PBD: 1997
- Country of Publication:
- United States
- Language:
- English
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