Semiconductor particles in bilayer lipid membranes. Formation, characterization, and photoelectrochemistry

Journal Article · Wed Feb 17 00:00:00 EST 1988 · J. Am. Chem. Soc.; (United States)

DOI:https://doi.org/10.1021/ja00212a005· OSTI ID:5523149

Zhao, X K; Baral, S B; Rolandi, R; Fendler, J H

Bilayer lipid membranes (BLMs) have been formed from bovine brain phosphatidylserine (PS), glyceryl monooleate (GMO), and a ploymerizable surfactant, (n-C/sub 15/H/sub 31/CO/sub 2/(CH/sub 2/))/sub 2/N/sup +/(CH/sub 3/)CH/sub 2/C/sub 6/H/sub 4/CH==CH/sub 2/Cl/sup -/(STYRS). These BLMs were then used to provide matrices for the in situ generation of microcrystalline CdS, CuS, Cu/sub 2/S, PbS, ZnS, HgS, and In/sub 2/S/sub 3/. Semiconductors were formed by injecting appropriate metal ion precursors and H/sub 2/S into the bathing solutions on opposite sides of the BLM. Their presence was established by voltage-dependent capacitance measurements, absorption spectroscopy, and optical microscopy. Subsequent to the injection of H/sub 2/S, the first observable change was the appearance of fairly uniform white dots on the black film. These dots rapidly moved around and grew in size, forming islands that then merged with themselves and with a second generation of dots, which ultimately led to a continuous film that continued to grow in thickness. Film formation and growth were monitored by simultaneous optical thickness and capacitance measurements. These data were treated in terms of an equivalent R-C circuit and allowed for the assessment of the semiconductor penetration depth into the BLM. This value for a GMO-BLM-supported In/sub 2/S/sub 3/ film was determined to be 24 A. Bandgap excitation, by nanosecond-pulsed or continuous illumination of the BLM-supported semiconductor film, led to observable photoelectric effects. Visible light (lambda > 350 nm) excitation into STYRS-BLM-supported CdS led to polymerization of the styrene moiety of STYRS. BLM-supported semiconductors remained stable for days.

• Research Organization: Syracuse Univ., NY
• OSTI ID: 5523149
• Journal Information: J. Am. Chem. Soc.; (United States), Vol. 110:4
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
CADMIUM SULFIDES
CHEMICAL PREPARATION
ELECTROCHEMISTRY
PHOTOCHEMISTRY
COPPER SULFIDES
INDIUM SULFIDES
LEAD SULFIDES
MERCURY SULFIDES
SEMICONDUCTOR MATERIALS
PERFORMANCE
ZINC SULFIDES
ABSORPTION SPECTROSCOPY
CAPACITANCE
EXPERIMENTAL DATA
LAYERS
LIPIDS
MEMBRANES
OPTICAL MICROSCOPY
THIN FILMS
CADMIUM COMPOUNDS
CHALCOGENIDES
CHEMISTRY
COPPER COMPOUNDS
DATA
ELECTRICAL PROPERTIES
FILMS
INDIUM COMPOUNDS
INFORMATION
INORGANIC PHOSPHORS
LEAD COMPOUNDS
MATERIALS
MERCURY COMPOUNDS
MICROSCOPY
NUMERICAL DATA
ORGANIC COMPOUNDS
PHOSPHORS
PHYSICAL PROPERTIES
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
SYNTHESIS
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS
400201* - Chemical & Physicochemical Properties
400500 - Photochemistry
400400 - Electrochemistry
360603 - Materials- Properties