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Title: Capillary instabilities in thin films. II. Kinetics

We consider the kinetic evolution of perturbations to thin films. Since all small (nonsubstrate intersecting) perturbations to the film surface decay, we consider the evolution of large perturbations, in the form of a single hole which exposes the substrate. For large holes, the hole radius increases at a constant rate under the assumption of evaporation/condensation kinetics. When the dominant transport mode is surface diffusion, large holes grow with a rate proportional to t/sup -3/4/ (log/sup 3/(t/ rho/sup 4//sub c/)). Small holes with a radii less than rho/sub c/ shrink, where rho/sub c/ is the film thickness divided by the tangent of the equilibrium wetting angle. The growth of these holes eventually leads to hole impingement which ruptures the film, creating a set of disconnected islands. The relaxation time for these islands to go to their equilibrium shape and size (rho/sub eq/) scales as rho/sup 2//sub eq/ or rho/sup 4//sub eq/ for evaporation/condensation or surface diffusion kinetics, respectively.
Authors:
;
Publication Date:
OSTI Identifier:
5522181
Resource Type:
Journal Article
Resource Relation:
Journal Name: J. Appl. Phys.; (United States); Journal Volume: 60:1
Research Org:
Los Alamos National Laboratory, Los Alamos, New Mexico 87545
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; THIN FILMS; DIFFUSION; STABILITY; SURFACE PROPERTIES; CAVITIES; EVAPORATION; FLUCTUATIONS; KINETICS; RELAXATION; FILMS; PHASE TRANSFORMATIONS; VARIATIONS 656000* -- Condensed Matter Physics