Radiation and temperature tolerant hybrids

Conference · Tue Dec 01 00:00:00 EST 1981

OSTI ID:5505814

Palmer, D W; Draper, B L

The nuclear and space industries require electronics with higher tolerance to radiation than that commercially available. The recently developed 300/sup 0/C electronics technology based on junction field-effect transistors and thick film hybridization was tested beyond 10/sup 9/ rad (Si) in a cobalt 60 gamma source and 10/sup 16/ neutrons/cm/sup 2/ in an annular core reactor. Circuits and individual components from this technology all survived these total doses although often required annealing at 200/sup 0/C or 300/sup 0/C to regain functionality. Radiation tolerance comparisons were made with military radhard CMOS, simplified linear I/sup 2/L, and JFET technologies. Real time 200 to 300/sup 0/C annealing should allow circuit functionality to even higher radiation levels.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5505814
• Report Number(s): SAND-82-0032C; CONF-811213-5; ON: DE82010081; TRN: 82-010667
• Resource Relation: Conference: IEEE high temperature electronics and instrumentation conference, Houston, TX, USA, 7 Dec 1981
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
22 GENERAL STUDIES OF NUCLEAR REACTORS
ELECTRONIC CIRCUITS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
THERMAL STRESSES
REACTOR COMPONENTS
SEMICONDUCTOR DEVICES
RADIATION EFFECTS
STRESSES
TESTING
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
220200 - Nuclear Reactor Technology- Components & Accessories