Electronic properties of ZnO varistors: a new model

Conference · Thu Jan 01 00:00:00 EST 1981

OSTI ID:5480595

Pike, G E

Much of the research on ZnO varistors has concentrated on the explanation of their dc current-voltage characteristics. However, varistors also have unusual ac properties which can be technologically important, and must be described by any comprehensive model. In an ideal varistor with identical grain boundaries throughout, there should be no dispersive capacitance at zero bias. In real varistors this capacitance varies considerably with frequency. This dispersion has two causes, charge trapping in the depletion regions and differing grain boundary barriers. Calculations for each process are given. As the voltage across the varistor is increased, the low frequency capacitance is observed to increase well below the breakdown voltage. At even higher voltages the capacitance turns over and becomes negative. All of these effects can be described with a double depletion layer/thermionic emission model.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5480595
• Report Number(s): SAND-81-1908C; CONF-811178-1; ON: DE82005799
• Resource Relation: Conference: Symposium on grain boundaries in semiconductors, Boston, MA, USA, 15 Nov 1981
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
36 MATERIALS SCIENCE
SEMICONDUCTOR RESISTORS
ELECTRICAL PROPERTIES
ZINC OXIDES
CHALCOGENIDES
ELECTRICAL EQUIPMENT
EQUIPMENT
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RESISTORS
SEMICONDUCTOR DEVICES
ZINC COMPOUNDS
440300* - Miscellaneous Instruments- (-1989)
360204 - Ceramics
Cermets
& Refractories- Physical Properties