Absolute pressure derivatives of deep level defects in III-V semiconductors

Conference · Sun Nov 01 00:00:00 EST 1987

OSTI ID:5451570

Nolte, D D; Walukiewicz, W; Haller, E E

Based on transition metal reference levels, we present absolute pressure derivatives for band-edges in GaAs and InP and defects in GaAs. The defect deformation potentials are directly related to the electron-lattice coupling which drives lattice relaxation around the defects. We find an exceedingly large inward lattice relaxation of the EL2 defect in GaAs upon electron emission. 12 refs., 1 fig.

• Research Organization: Lawrence Berkeley Lab., CA (USA); California Univ., Berkeley (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5451570
• Report Number(s): LBL-23599; CONF-871124-80; ON: DE88006318
• Resource Relation: Conference: Fall meeting of the Materials Research Society, Boston, MA, USA, 30 Nov 1987; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL LATTICES
DEFORMATION
ELECTRONIC STRUCTURE
ENERGY LEVELS
ION IMPLANTATION
NICKEL
PRESSURE DEPENDENCE
RELAXATION
TITANIUM
VANADIUM
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELEMENTS
GALLIUM COMPOUNDS
METALS
PNICTIDES
TRANSITION ELEMENTS
360602* - Other Materials- Structure & Phase Studies
360605 - Materials- Radiation Effects